InGaAsSb/InP Double Heterojunction Bipolar Transistors Grown by Solid-Source Molecular Beam Epitaxy
نویسندگان
چکیده
The DC and RF characteristics of double heterojunction bipolar transistors (DHBTs) with a compressively strained InGaAsSb base prepared by solid-source molecular beam epatixy (MBE) are investigated. Compared with conventional InGaAs/InP DHBT structures, the proposed InGaAsSb/InP HBT exhibits lower baseemitter turn-on voltage and VCE-offset voltage. Also observed are the high collector current densities resulted from the suppressed current blocking effect due to the typeII InGaAsSb/InGaAs base-collector.
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